
FOD817B3S
制造商:
ON Semiconductor
封装: DIP
Datasheet:                
FOD817B3S
型号描述:
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-p
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数量:
0
价格:
¥1.6767
总价:
¥1.677
¥1.6767
¥1.6767
¥1.5836
¥39.59
¥1.4904
¥149.04
¥1.3973
¥698.65
¥1.3973
¥1397.3